v ds i d (at v gs =10v) 7.6a r ds(on) (at v gs =10v) < 23m ? r ds(on) (at v gs =4.5v) < 26m ? r ds(on) (at v gs =2.5v) < 34m ? r ds(on) (at v gs =1.8v) < 52m ? symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r jl 1.28 t a =70c junction and storage temperature range -55 to 150 c/w r ja 48 74 62.5 c thermal characteristics units parameter typ max the AO9926C uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v while retaining a 12v v gs(max) rating. this device is suitable for use as a uni- directional or bi-directional load switch. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 20v drain-source voltage 20 v 12 gate-source voltage t a =25c a i d 7.6 6.1 38 t a =70c power dissipation b p d pulsed drain current c continuous drain current t a =25c w 2 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 32 90 40 maximum junction-to-ambient a soic-8 g2 d2 s2 g1 d1 s1 g1 s1 g2 s2 d1 d1 d2 d2 5 8 6 1 3 7 4 2 top view www.freescale.net.cn 1/5 AO9926C 20v dual n-channel mosfet general description features
symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 0.4 0.75 1.1 v i d(on) 38 a 16.5 23 t j =125c 25 30 18.5 26 m w 24 34 m w 32 52 m w g fs 25 s v sd 0.7 1 v i s 2.5 a c iss 420 525 630 pf c oss 65 95 125 pf c rss 45 75 105 pf r g 0.8 1.7 2.6 w q g (10v) 12.5 nc q g (4.5v) 6 nc q gs 1 nc q 2 nc maximum body-diode continuous current input capacitance output capacitance dynamic parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =7.6a gate source charge gate drain charge total gate charge r ds(on) static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =7.6a v gs =1.8v, i d =2a v gs =4.5v, i d =7a v gs =2.5v, i d =6a v ds =v gs i d =250 m a v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =7.6a reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters q gd 2 nc t d(on) 3 ns t r 7.5 ns t d(off) 20 ns t f 6 ns t rr 14 ns q rr 6 nc body diode reverse recovery charge i f =7.6a, di/dt=100a/ m s turn-on delaytime turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.3 w , r gen =3 w turn-off fall time gate drain charge body diode reverse recovery time i f =7.6a, di/dt=100a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. www.freescale.net.cn 2/5 AO9926C 20v dual n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 5 10 15 20 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =7.6a v gs =2.5v i d =7a v gs =4.5v i d =6a v gs =1.8v i d =2a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 10 20 30 40 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3.5v 1.8v 3.5v 4.5v 2.5v 10v v gs =2.5v v gs =1.8v 40 0 5 10 15 20 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =7.6a v gs =2.5v i d =7a v gs =4.5v i d =6a v gs =1.8v i d =2a 15 20 25 30 35 40 45 0 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =7.6a 25 c 125 c 0 10 20 30 40 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3.5v 1.8v 3.5v 4.5v 2.5v 10v v gs =2.5v v gs =1.8v www.freescale.net.cn 3/5 AO9926C 20v dual n-channel mosfet
typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =10v i d =7.6a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0 2 4 6 8 10 0 5 10 15 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =10v i d =7.6a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =90 c/w www.freescale.net.cn 4/5 AO9926C 20v dual n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d u t v gs d io d e r eco very t est c ircu it & w a vefo rm s v ds + rr q = - idt t - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig v gs - + vd c d u t l v gs v ds isd isd d io d e r eco very t est c ircu it & w a vefo rm s v ds - v ds + i f di/dt i r m rr v dd v dd q = - idt t rr - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff www.freescale.net.cn 5/5 AO9926C 20v dual n-channel mosfet
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